3LN01M no.6138-1/4 features ? low on-resistance. ? ultrahigh-speed switching. ? 2.5v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 10 v drain current (dc) i d 0.15 a drain current (pulse) i dp pw10 m s, duty cycle 1% 0.6 a allowable power dissipation p d 0.15 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =10v, i d =100 m a 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =80ma 0.15 0.22 s r ds (on)1 i d =80ma, v gs =4v 2.9 3.7 w static drain-to-source on-state resistance r ds (on)2 i d =40ma, v gs =2.5v 3.7 5.2 w r ds (on)3 i d =10ma, v gs =1.5v 6.4 12.8 w input capacitance ciss v ds =10v, f=1mhz 7.0 pf output capacitance coss v ds =10v, f=1mhz 5.9 pf reverse transfer capacitance crss v ds =10v, f=1mhz 2.3 pf marking : ya continued on next page. ordering number : en6138a 72606 / 32406pe ms im tb-00002152 / 31000 ts (koto) ta-1985 3LN01M n-channel silicon mosfet general-purpose switching device applications sanyo semiconductors data sheet tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein.
3LN01M no.6138-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on delay time t d (on) see specified test circuit. 19 ns rise time t r see specified test circuit. 65 ns turn-off delay time t d (off) see specified test circuit. 155 ns fall time t f see specified test circuit. 120 ns total gate charge qg v ds =10v, v gs =10v, i d =150ma 1.58 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =150ma 0.26 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =150ma 0.31 nc diode forward voltage v sd i s =150ma, v gs =0v 0.87 1.2 v package dimensions switching time test circuit unit : mm 7023-010 0.65 0.65 2.0 0.9 0.6 0.3 12 3 2.1 1.25 0.425 0.425 0.2 0.3 0.15 0 to 0.1 1 : gate 2 : source 3 : drain sanyo : mcp pw=10 m s d.c. 1% 4v 0v v in p. g 50 w g s d i d =80ma r l =187.5 w v dd =15v v out 3LN01M v in gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 0 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 0.6 0.8 1.0 v gs =1.5v 2.0v 2.5v 4.0v 3.5v 3.0v 6.0v 0 0 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 v ds =10v ta= --25 c ta=75 c 25 c 75 c --25 c it00029 it00030 25 c
3LN01M no.6138-3/4 diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain current, i d -- a sw time -- i d switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? yfs ? -- s ? yfs ? -- i d ambient temperature, ta -- c r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- w drain current, i d -- a r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- w drain current, i d -- a r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- w drain current, i d -- a r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- w gate-to-source voltage, v gs -- v r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- w 0 0 12 1 34 2 56 3 4 5 6 7 8 9 10 78 910 ta=25 c 0.01 0.1 23 57 23 57 10 7 5 3 2 1.0 1.0 25 c --25 c ta=75 c it00031 it00032 v gs =4v 80ma i d =40ma 0.01 0.6 0.5 0.8 0.7 0.9 1.0 1.1 1.2 0.1 1.0 7 5 3 2 7 5 3 2 v gs =0v --25 c 25 c ta=75 c 0.01 10 0.1 23 57 2 1000 100 7 5 3 2 7 5 3 2 v dd =15v v gs =4v t d (on) t r t f t d (off) it00037 it00038 --60 0 --40 --20 1 020 2 40 60 3 4 5 6 7 80 100 120 140 160 i d =40ma, v gs =2.5v i d =80ma, v gs =4.0v 0.01 0.01 0.1 23 57 23 57 0.1 7 5 3 2 7 5 3 2 1.0 1.0 v ds =10v 75 c ta= --25 c 25 c it00035 it00036 0.01 0.1 23 57 23 57 10 1.0 7 5 3 2 1.0 v gs =2.5v 0.001 1.0 0.01 23 57 23 57 100 10 7 5 3 2 7 5 3 2 0.1 v gs =1.5v ta=75 c 25 c --25 c --25 c 25 c ta=75 c it00033 it00034
3LN01M no.6138-4/4 ps p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w v gs -- qg gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf total gate charge, qg -- nc 0 2 4 6 8 10 12 14 16 18 20 1.0 10 7 5 3 2 7 5 3 2 100 ciss coss crss f=1mhz 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 6 7 8 9 10 v ds =10v i d =150ma it00039 it00040 0 20 40 60 100 120 140 0 80 0.20 0.10 0.05 0.15 160 it00041 note on usage : since the 3LN01M is a mosfet product, please avoid using this device in the vicinity of highly charged objects. this catalog provides information as of march, 2006. specifications and information herein are subject to change without notice. specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
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